China’s CXMT unveils ‘key progress’ on chip structure pursued by Samsung, SK Hynix
Quick Look
CXMT president Cao Kanyu announced at a Shanghai industrial event that the company plans to launch a new server-memory product by the end of 2026 based on a 4F square-cell design, which offers higher storage density than the current 6F square structure used in mainstream DRAM.
AI-generated summary
Why It Matters
Current mainstream commercial DRAM uses a 6F square-cell structure, where F represents the minimum line width of a semiconductor.
CXMT planned to roll out a new server-memory product based on the structure by the end of 2026, president Cao Kanyu said at an industrial event in Shanghai over the weekend, according to a company statement.
At the centre of the development is the “4F square” design, in which each memory cell occupies an area of four square F, with F representing the minimum line width of a semiconductor. The structure enables higher storage density by fitting more cells onto a single chip.
For now, mainstream commercial dynamic random-access memory (DRAM) uses a 6F square-cell structure.
What to Watch
AI outlook — possibilities, not facts
CXMT will launch its new server-memory product based on the 4F square design by the end of 2026
Likely · Within months
Open Questions
- What specific performance improvements will the 4F design offer over existing 6F DRAM?
- When exactly in 2026 will the product be released?
- Which markets or customers is CXMT targeting with this new server-memory product?
