
Korean media reported that Huida's next-generation customized high-bandwidth memory (NVHBM) specified using TSMC's 3-nanometer process to manufacture basic dies. Samsung decided to cooperate, and the two parties cooperated in the HBM manufacturing stage for the first time.
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Huida proposed a customized HBM solution called NVHBM, which is expected to be based on the seventh-generation HBM and HBM4E.
Korean media reported that Huida's next-generation customized high-bandwidth memory (NVHBM) is designated to use TSMC's 3-nanometer process to manufacture the basic die. Samsung has decided to accept the request after an internal review.
Korean media reported that Huida's next-generation customized high-bandwidth memory (NVHBM) specified using TSMC's 3-nanometer process to manufacture basic chips, and required Samsung, SK Hynix and Micron to unify process specifications. Samsung decided to cooperate after evaluation. This is also the first time that Samsung and TSMC have cooperated from the HBM chip manufacturing stage. It shows that Samsung no longer adheres to the integrated supply model for Huida's customized HBM orders, but instead adapts to customer requirements and improves supply flexibility.
"Seoul Economic Daily" reported on the 18th that in order to ensure that the product performance and quality of customized HBM are consistent, Huida requires Samsung Electronics, SK Hynix and Micron to use the same process specifications to manufacture the next generation of customized HBM, in which the base die (Base Die) must use TSMC's 3nm process. Samsung has decided to accept the request after an internal review.
The report pointed out that Huida proposed a customized HBM solution called NVHBM in August this year, which is expected to be based on the seventh-generation HBM and HBM4E. In addition to requiring the basic die to use TSMC's 3nm process, it also requires the core die (Core Die) responsible for storing data to use the sixth-generation DRAM process "1c".
Huida hopes to reduce performance differences and verification burdens between products from different suppliers through a unified manufacturing process. If various memory manufacturers use different processes, even if the product specifications are similar, they may still need to be verified separately; unifying key processes can help ensure consistency in product performance.
This arrangement also further extends the cooperation between Samsung and TSMC. The two parties have cooperated in advanced packaging in the past, assisting HBM in integrating packaging technology with TSMC, but this is the first time they have cooperated from the HBM chip manufacturing stage. For Samsung, this means that in Huida's customized memory solutions, some process choices must meet customer requirements.
However, this does not mean that Samsung has completely abandoned its own manufacturing process. The report pointed out that Samsung still maintains its own integrated manufacturing strategy for general HBM products, including manufacturing basic dies using Samsung's 4nm process, while core dies use its own 1c process. Samsung started mass production of HBM4 earlier this year, and HBM4E is also undergoing mass production verification.
As for customized HBM products for other customers, Samsung still plans to maintain the integrated manufacturing model. The report also mentioned that if the demand for NVHBM exceeds TSMC's production capacity in the future, Samsung is still evaluating whether it can use its own foundry process to produce basic chips as a backup plan.

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