DB HiTek completes 8-inch 1200V SiC MOSFET process reliability verification… Next year’s mass production target

DB HiTek announced on the 9th that it has completed the reliability verification of the 8-inch wafer-based 1,200V silicon carbide (SiC) MOSFET process and will begin its SiC foundry (semiconductor consignment production) business with the goal of mass production next year.

SiC is a next-generation power semiconductor material that has better characteristics than silicon (Si) in high temperature and high voltage environments and is used in electric vehicles, new and renewable energy, and industrial power devices. Currently, 6-inch wafers are the mainstream, but a conversion to 8-inch wafers is in progress to increase production efficiency and cost competitiveness.

Through this verification, DB HiTek built the world's first 8-inch 1,200V SiC foundry batch process. We plan to develop customer products and secure new customers by establishing a foundry service system that supports everything from design to manufacturing, characteristic evaluation, and reliability verification.

In addition, we provide 1st and 2nd generation PDK (Process Design Kit) to support customer product development, and plan to release the 3rd generation PDK in November. DB HiTek explained that by using PDK, the initial development burden can be reduced and the product development period can be shortened by more than one year.

DB HiTek plans to start processing services for existing cooperative customers from the third quarter of this year and expand the service to all customers from the second quarter of next year.